? semiconductor components industries, llc, 2001 june, 2000 rev. 1 1 publication order number: mmbth10lt1/d mmbth10lt1, mmbth10-4lt1 preferred devices vhf/uhf transistor npn silicon ? device marking: 3em device marking: maximum ratings rating symbol value unit collector-emitter voltage v ceo 25 vdc collector-base voltage v cbo 30 vdc emitter-base voltage v ebo 3.0 vdc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient (1) r q ja 556 c/w total device dissipation alumina substrate (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient (2) r q ja 417 c/w junction and storage temperature range t j , t stg 55 to +150 c (1) fr5 = 1.0 x 0.75 x 0.062 in. (2) alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina device package shipping ordering information mmbth10lt1 sot23 http://onsemi.com case 318 sot23 style 6 3000/tape & reel preferred devices are recommended choices for future use and best overall value. mmbth104lt1 sot23 3000/tape & reel 1 2 3 collector 3 1 base 2 emitter
mmbth10lt1, mmbth104lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 25 e e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0) v (br)cbo 30 e e vdc emitterbase breakdown voltage (i e = 10 m adc, i c = 0) v (br)ebo 3.0 e e vdc collector cutoff current (v cb = 25 vdc, i e = 0) i cbo e e 100 nadc emitter cutoff current (v eb = 2.0 vdc, i c = 0) i ebo e e 100 nadc on characteristics dc current gain (i c = 4.0 madc, v ce = 10 vdc) mmbth10lt1 mmbth104lt1 h fe 60 120 e e e 240 e collectoremitter saturation voltage (i c = 4.0 madc, i b = 0.4 madc) v ce(sat) e e 0.5 vdc baseemitter on voltage (i c = 4.0 madc, v ce = 10 vdc) v be e e 0.95 vdc smallsignal characteristics currentgain bandwidth product (i c = 4.0 madc, v ce = 10 vdc, f = 100 mhz) mmbth10lt1 mmbth104lt1 f t 650 800 e e e e mhz collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb e e 0.7 pf commonbase feedback capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c rb e e 0.65 pf collector base time constant (i c = 4.0 madc, v cb = 10 vdc, f = 31.8 mhz) rb c c e e 9.0 ps
mmbth10lt1, mmbth104lt1 http://onsemi.com 3 typical characteristics 600 f, frequency (mhz) figure 1. rectangular form g ib (mmhos) figure 2. polar form f, frequency (mhz) figure 3. rectangular form g fb (mmhos) figure 4. polar form 70 60 50 10 0 -10 0204060 0 80 100 70 60 50 40 30 20 0 60 30 20 10 10 30 50 70 -10 10 200 300 400 500 700 1000 80 -20 -30 -40 -50 -60 40 30 20 -20 -30 50 40 100 200 300 400 500 700 1000 0 -10 -20 -30 30 20 10 40 70 60 50 b fb -g fb 100 200 400 700 1000 mhz 1000 mhz 100 200 400 700 g ib -b ib jb (mmhos) ib jb (mmhos) fb , forward transfer admittance (mmhos) , input admittance (mmhos) ib y fb , forward transfer admittance commonbase y parameters versus frequency (v cb = 10 vdc, i c = 4.0 madc, t a = 25 c) y ib , input admittance ib y y
mmbth10lt1, mmbth104lt1 http://onsemi.com 4 typical characteristics f, frequency (mhz) figure 5. rectangular form g rb (mmhos) figure 6. polar form f, frequency (mhz) figure 7. rectangular form g ob (mmhos) figure 8. polar form 0 2.0 4.0 6.0 8.0 10 -2.0 -1.2 -0.4 0.4 0 -5.0 1.2 2.0 10 4.0 2.0 0 -1.8 -0.8 0 0.8 1.6 8.0 6.0 -4.0 -3.0 -2.0 -1.0 100 4.0 3.0 1.0 0 200 300 400 500 700 1000 5.0 100 200 300 400 500 700 1000 0 3.0 2.0 1.0 4.0 7.0 6.0 5.0 10 9.0 8.0 2.0 b ob g ob -b rb -b rb -g rb mps h11 mps h10 100 200 400 700 1000 mhz 100 200 400 700 1000 mhz jb (mmhos) rb jb (mmhos) ob , output admittance (mmhos) ob , reverse transfer admittance (mmhos) rb y ob , output admittance commonbase y parameters versus frequency (v cb = 10 vdc, i c = 4.0 madc, t a = 25 c) y rb , reverse transfer admittance y y
mmbth10lt1, mmbth104lt1 http://onsemi.com 5 the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation p d = t j(max) t a r q ja p d = 150 c 25 c 556 c/w = 225 milliwatts the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milli- watts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. there- fore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device.
mmbth10lt1, mmbth104lt1 http://onsemi.com 6 package dimensions sot23 (to236ab) case 31808 issue af style 6: pin 1. base 2. emitter 3. collector d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material.
mmbth10lt1, mmbth104lt1 http://onsemi.com 7 notes
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